SKU: EK255
₹49.00
Compare1 x AP2112K-3.3TRG1 LDO
SKU : EK255
IRFP9240 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
Features:-
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | P-Channel |
| Drain-Source Breakdown Voltage (Vds) | -200V |
| Continuous Drain Current (Id) | -12A |
| Drain-Source Resistance (Rds On) | 500mOhms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 44 nC |
| Operating Temperature Range | -55 – 150°C |
| Power Dissipation (Pd) | 150W |
SKU: EK255094
SKU : EK255
IRFP240 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features:-
• Dynamic dV/dt Rating
• Repetitive avalanche rated
• Isolated central mounting hole
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Compliant to RoHS directive 2002/95/EC
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 200V |
| Continuous Drain Current (Id) | 20A |
| Drain-Source Resistance (Rds On) | 0.18Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 70 nC |
| Operating Temperature Range | -55 – 150°C |
| Power Dissipation (Pd) | 150W |
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